10 citations · 11 across the 3 of their papers we have counts for
3 papers · 1 filter
Electrical driving of hole spin states in planar silicon MOS device by g-matrix modulation
Aaquib Shamim, Scott D. Liles, Joe Hillier +10
Hole spins in group IV quantum dots are a highly promising way to develop CMOS compatible spin qubits owing to their inherent spin-orbit coupling, which enables fast, coherent, and…
Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETs
J. P. Wendoloski, J. Hillier, S. D. Liles +17
The quality of the silicon-oxide interface plays a crucial role in fabricating reproducible silicon spin qubits. In this work we characterize interface quality by performing mobili…
Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density regime
Laurens H. Willems van Beveren, Kuan Y. Tan, Nai-Shyan Lai +2
We report the fabrication and study of Hall bar MOSFET devices in which an overlapping-gate architecture allows four-terminal measurements of low-density 2D electron systems, while…