Cheng-Wei Lee

activity

20232025

most citedComputational insights into phase equilibria between wide-gap semiconductors and contact materials

1 citations · 1 across the 3 of their papers we have counts for

collaborators

4 papers

cond-mat.mtrl-sci2025

Stability, growth, and doping of In $_{2}$ (Si, Ge) $_{2}$ O $_{7}$ as promising n-type wide-gap semiconductors

Cheng-Wei Lee, Kingsley Egbo, Emily Garrity +4

In this paper we investigate, computationally and experimentally, the phase stability, electronic structure properties, and the propensity for n-type doping of In $_{2}$ X $_{2}$ O$_{7…

cond-mat.mtrl-sci2024

Reliable operation of Cr $_{2}$ O $_{3}$ :Mg/ $β$ -Ga $_{2}$ O $_{3}$ p-n heterojunction diodes at 600 $^{\circ}$ C

William A. Callahan, Kingsley Egbo, Cheng-Wei Lee +3

$β$ -Ga $_{2}$ O $_{3}$ -based semiconductor heterojunctions have recently demonstrated improved performance at high voltages and elevated temperatures and are thus promising for applicatio…

cond-mat.mtrl-sci2024

NiGa $_{2}$ O $_{4}$ interfacial layers in NiO/Ga $_{2}$ O $_{3}$ heterojunction diodes at high temperature

Kingsley Egbo, Emily M. Garrity, William A. Callahan +6

NiO/Ga $_{2}$ O $_{3}$ heterojunction diodes have attracted attention for high-power applications, but their high-temperature performance and reliability remain underexplored. Here we…

cond-mat.mtrl-sci2023★ 1 cited

Computational insights into phase equilibria between wide-gap semiconductors and contact materials

Cheng-Wei Lee, Andriy Zakutayev, Vladan Stevanović

Novel wide-band-gap semiconductors are needed for next-generation power electronic but there is a gap between a promising material and a functional device. Finding stable contacts…

Stability, growth, and doping of In2​(Si, Ge)2​O7​ as promising n-type wide-gap semiconductors

Reliable operation of Cr2​O3​:Mg/ β-Ga2​O3​ p-n heterojunction diodes at 600∘C

NiGa2​O4​ interfacial layers in NiO/Ga2​O3​ heterojunction diodes at high temperature

Computational insights into phase equilibria between wide-gap semiconductors and contact materials

Stability, growth, and doping of In $_{2}$ (Si, Ge) $_{2}$ O $_{7}$ as promising n-type wide-gap semiconductors

Reliable operation of Cr $_{2}$ O $_{3}$ :Mg/ $β$ -Ga $_{2}$ O $_{3}$ p-n heterojunction diodes at 600 $^{\circ}$ C

NiGa $_{2}$ O $_{4}$ interfacial layers in NiO/Ga $_{2}$ O $_{3}$ heterojunction diodes at high temperature