Myriam H. Aguirre

activity

20162026

most citedLarge memcapacitance and memristance at Nb:SrTiO

_{3}

/ La

_{0.5}

_{0.5}

_{0.5}

_{0.5}

_{3 - δ}

Topotactic Redox Interface

10 citations · 16 across the 6 of their papers we have counts for

collaborators

Showing 2025 · cond-mat.mtrl-sciShow all

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cond-mat.mtrl-sci2025

Oxygen vacancy engineering in pulsed laser deposited BaSnO $_{3}$ thin films on SrTiO $_{3}$

Wilson Román Acevedo, Myriam H. Aguirre, Beatriz Noheda +1

We demonstrate the tunability of oxygen content in pulsed laser deposition (PLD)-grown barium stannate (BaSn $O_{3}$ , BSO) thin films by precisely controlling the background oxygen pr…

Oxygen vacancy engineering in pulsed laser deposited BaSnO3​ thin films on SrTiO3​

Oxygen vacancy engineering in pulsed laser deposited BaSnO $_{3}$ thin films on SrTiO $_{3}$