17 citations · 38 across the 8 of their papers we have counts for
8 papers
Two-dimensional Indium Oxide at the Epitaxial Graphene/SiC Interface: Synthesis, Structure, Properties, and Devices
Furkan Turker, Bohan Xu, Chengye Dong +15
High-quality two-dimensional (2D) dielectrics are crucial for fabricating 2D/3D hybrid vertical electronic devices such as metal-oxide-semiconductor (MOS) based Schottky diodes and…
Robust Super-Moiré in Large Angle Single-Twist Bilayers
Yanxing Li, Chuqiao Shi, Fan Zhang +19
Forming long wavelength moiré superlattices (MSL) at small-angle twist van der Waals (vdW) bilayers has been a key approach to creating moiré flat bands. The small-angle twist, how…
Charge to spin conversion in atomically thin bismuth
Wilson J. Yánez-Parreño, Alexander Vera, Sandra Santhosh +8
We report charge to spin conversion in a hybrid heterostructure comprised of atomically thin bismuth (Bi) confined between a silicon carbide (SiC) substrate and epitaxial graphene…
Ultrafast Coulomb blockade in an atomic-scale quantum dot
Jonas Allerbeck, Laric Bobzien, Nils Krane +5
Controlling electron dynamics at optical clock rates is a fundamental challenge in lightwave-driven nanoelectronics. Here, we demonstrate ultrafast charge-state manipulation of ind…
Layer-Dependent Charge State Lifetime of Single Se Vacancies in WSe
Laric Bobzien, Jonas Allerbeck, Nils Krane +7
Defect engineering in two-dimensional semiconductors has been exploited to tune the optoelectronic properties and introduce new quantum states in the band gap. Chalcogen vacancies…
Experimental signature of layer skyrmions and implications for band topology in twisted WSe2 bilayers
Fan Zhang, Nicolás Morales-Durán, Yanxing Li +13
Transition metal dichalcogenide (TMD) twisted homobilayers have been established as an ideal platform for studying strong correlation phenomena, as exemplified by the recent discov…
Influence of Rhenium Concentration on Charge Doping and Defect Formation in MoS2
Kyle T. Munson, Riccardo Torsi, Fatimah Habis +8
Substitutionally doped transition metal dichalcogenides (TMDs) are the next step towards realizing TMD-based field effect transistors, sensors, and quantum photonic devices. Here,…
Atomistic Control in Molecular Beam Epitaxy Growth of Intrinsic Magnetic Topological Insulator MnBi2Te4
Hyunsue Kim, Mengke Liu, Lisa Frammolino +13
Intrinsic magnetic topological insulators have emerged as a promising platform to study the interplay between topological surface states and ferromagnetism. This unique interplay c…