597 citations · 2.9k across the 67 of their papers we have counts for
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CoMET: Composite-Input Magnetoelectric-based Logic Technology
Meghna G. Mankalale, Zhaoxin Liang, Zhengyang Zhao +3
This work proposes CoMET, a fast and energy-efficient spintronics device for logic applications. An input voltage is applied to a ferroelectric (FE) material, in contact with a com…
Picosecond all-optical switching of magnetic tunnel junctions
Jun-Yang Chen, Li He, Jian-Ping Wang +1
Control of magnetism without using magnetic fields enables large-scale integration of spintronic devices for memory, computation and communication in the beyond-CMOS era. Mechanism…
External-Field-Free Spin Hall Switching of Perpendicular Magnetic Nanopillar with a Dipole-Coupled Composite Structure
Zhengyang Zhao, Angeline Klemm Smith, Mahdi Jamali +1
Spin Hall effect (SHE) induced reversal of perpendicular magnetization has attracted significant interest, due to its potential to lead to low power memory and logic devices. Howev…
Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology
Zhengyang Zhao, Mahdi Jamali, Noel D'Souza +4
Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we d…