15 citations · 38 across the 7 of their papers we have counts for
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Best Practices for First-Principles Modeling of Amorphous Oxide Semiconductors: A Statistical Framework and Application to Zn-Sn-O
Michiel J. van Setten, Tonglin L. Newsom, Christopher Pashartis +3
Ternary and quaternary amorphous oxide semiconductors have many properties that make them promising candidates for use in electronic applications like display, memory, and back end…
Fundamental Understanding of Exposure and Process Chemistry for Enhanced Lithography and Stability of Metal Oxide Resists
Kevin M. Dorney, Ivan Pollentier, Fabian Holzmeier +11
Metal oxide resists (MORs) have shown great promise for high resolution patterning in extreme ultraviolet (EUV) lithography, with potential for integration into high volume manufac…
Unraveling the Reaction Mechanisms in a Chemically Amplified EUV Photoresist from a Combined Theoretical and Experimental Approach
Laura Galleni, Dhirendra P. Singh, Thierry Conard +5
Extreme ultraviolet (EUV) lithography has revolutionized high-volume manufacturing of nanoscale components, enabling the production of smaller, denser, and more energy efficient in…
Peak Broadening in Photoelectron Spectroscopy of Amorphous Polymers: the Leading Role of the Electrostatic Landscape
Laura Galleni, Arne Meulemans, Faegheh S. Sajjadian +8
The broadening in photoelectron spectra of polymers can be attributed to several factors, such as light source spread, spectrometer resolution, finite lifetime of the hole state, a…
In-poor IGZO: superior resilience to hydrogen in forming gas anneal and PBTI
A. Kruv, M. J. van Setten, A. Chasin +12
Integrating In-Ga-Zn-oxide (IGZO) channel transistors in silicon-based ecosystems requires the resilience of the channel material to hydrogen treatment. Standard IGZO, containing 4…
Size Effect on Raman Measured Stress and Strain Induced Phonon Shifts in Ultra-Thin Film Silicon
Christopher Pashartis, Michiel J. van Setten, Geoffrey Pourtois
The fabrication of complex nano-scale structures, which is a crucial step in the scaling of (nano) electronic devices, often leads to residual stress in the different layers presen…