223 citations · 386 across the 10 of their papers we have counts for
10 papers
Sub-40mV Sigma-VTH IGZO nFETs in 300mm Fab
Jerome Mitard, Luka Kljucar, Nouredine Rassoul +19
Back and double gate IGZO nFETs have been demonstrated down to 120nm and 70nm respectively leveraging 300mm fab processing. While the passivation of oxygen vacancies in IGZO is cha…
Dilute Rhenium Doping and its Impact on Intrinsic Defects in MoS2
Riccardo Torsi, Kyle T. Munson, Rahul Pendurthi +11
Substitutionally-doped 2D transition metal dichalcogenides are primed for next-generation device applications such as field effect transistors (FET), sensors, and optoelectronic ci…
Modeling X-ray Photoelectron Spectroscopy of Macromolecules Using GW
Laura Galleni, Faegheh S. Sajjadian, Thierry Conard +3
We propose a simple additive approach to simulate X-ray photoelectron spectra (XPS) of macromolecules based on the method. Single-shot () is a promising technique…
Hole-doping induced ferromagnetism in 2D materials
R. Meng, L. M. C. Pereira, J. P. Locquet +3
Two-dimensional (2D) ferromagnetic materials are considered as promising candidates for the future generations of spintronic devices. Yet, 2D materials with intrinsic ferromagnetis…
First-principles-based screening method for resistivity scaling of anisotropic metals
Kristof Moors, Kiroubanand Sankaran, Geoffrey Pourtois +1
The resistivity scaling of metals is a crucial limiting factor for further downscaling of interconnects in nanoelectronic devices that affects signal delay, heat production, and en…
Ab initio screening of metallic MAX ceramics for advanced interconnect applications
Kiroubanand Sankaran, Kristof Moors, Zsolt Tőkei +2
The potential of a wide range of layered ternary carbide and nitride MAX phases as conductors in interconnect metal lines in advanced CMOS technology nodes has been evaluated using…