1 citations · 1 across the 3 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2025
Two-dimensional Indium Oxide at the Epitaxial Graphene/SiC Interface: Synthesis, Structure, Properties, and Devices
Furkan Turker, Bohan Xu, Chengye Dong +15
High-quality two-dimensional (2D) dielectrics are crucial for fabricating 2D/3D hybrid vertical electronic devices such as metal-oxide-semiconductor (MOS) based Schottky diodes and…
physics.app-ph2020★ 1 cited
Photo-physics and electronic structure of lateral graphene/MoS2 and metal/MoS2 junctions
Shruti Subramanian, Quinn T. Campbell, Simon Moser +18
Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interfa…
cond-mat.mtrl-sci2009
Nucleation of Graphene on SiC(0001)
Joshua Robinson, Kathleen Trumbull, Randall Cavalero +7
This paper has been withdrawn due to the adherance to the double submission policies of a refereed journal. Our apologies.