activity
20092025
most citedCorrelating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale

199 citations · 433 across the 9 of their papers we have counts for

collaborators
Showing cond-mat.mtrl-sciShow all

8 papers · 1 filter

cond-mat.mtrl-sci2025

Defect-Mediated Phase Engineering of 2D Ag at the Graphene/SiC Interface

Arpit Jain, Boyang Zheng, Sawani Datta +23

Atomically thin silver (Ag) films offer unique opportunities in plasmonic, quantum optics, and energy harvesting, yet conventional growth methods struggle to achieve structural con…

cond-mat.mtrl-sci2022★ 21 cited

Large-Area Intercalated 2D-Pb/Graphene Heterostructure as a Platform for Generating Spin-Orbit Torque

Alexander Vera, Boyang Zheng, Wilson Yanez +19

A scalable platform to synthesize ultrathin heavy metals may enable high efficiency charge-to-spin conversion for next-generation spintronics. Here we report the synthesis of air-s…

cond-mat.mtrl-sci2021

Tunable Two-Dimensional Group-III Metal Alloys

Siavash Rajabpour, Alexander Vera, Wen He +20

Chemically stable quantum-confined 2D metals are of interest in next-generation nanoscale quantum devices. Bottom-up design and synthesis of such metals could enable the creation o…

cond-mat.mtrl-sci2021★ 57 cited

Interlayer magnetophononic coupling in MnBi2Te4

Hari Padmanabhan, Maxwell Poore, Peter Kim +16

The emergence of magnetism in quantum materials creates a platform to realize spin-based applications in spintronics, magnetic memory, and quantum information science. A key to unl…

cond-mat.mtrl-sci2013★ 73 cited

Prospects of Direct Growth Boron Nitride Films as Substrates for Graphene Electronics

Michael S. Bresnehan, Matthew J. Hollander, Maxwell Wetherington +8

We present a route for direct growth of boron nitride via a polyborazylene to h-BN conversion process. This two-step growth process ultimately leads to a >25x reduction in the RMS…

cond-mat.mtrl-sci2010★ 81 cited

Morphology Characterization of Argon-Mediated Epitaxial Graphene on C-face SiC

Joseph L. Tedesco, Glenn G. Jernigan, James C. Culbertson +10

Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramaticall…