Spin injection into Si in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer

Shoichi Sato, Ryosho Nakane, Takato Hada +1

We demonstrated that the spin injection/extraction efficiency is enhanced by an ultrathin Mg insertion layer (<= 2 nm) in Fe/Mg/MgO/n+-Si tunnel junctions. In diode-type vertical t…