most citedRobust quantification of the diamond nitrogen-vacancy center charge state via photoluminescence spectroscopy

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cond-mat.mtrl-sci2026

Solution gate control of shallow silicon vacancy charge states in diamond

Charlie Pattinson, Daniel J. McCloskey, Nikolai Dontschuk +3

Silicon-vacancy (SiV) centers in diamond combine near-infrared emission with solid-state robustness, but their performance hinges on isolating favorable defect charge states. We de…