2 papers
cond-mat.mtrl-sci2026
Solution gate control of shallow silicon vacancy charge states in diamond
Charlie Pattinson, Daniel J. McCloskey, Nikolai Dontschuk +3
Silicon-vacancy (SiV) centers in diamond combine near-infrared emission with solid-state robustness, but their performance hinges on isolating favorable defect charge states. We de…
cond-mat.mes-hall2025
Robust quantification of the diamond nitrogen-vacancy center charge state via photoluminescence spectroscopy
Giannis Thalassinos, Daniel J. McCloskey, Alessandro Mameli +7
Nitrogen vacancy (NV) centers in diamond are at the heart of many emerging quantum technologies, all of which require control over the NV charge state. Hence, methods for quantific…