13 citations · 18 across the 6 of their papers we have counts for
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cond-mat.mtrl-sci2025★ 2 cited
Ferroelectric switching of quantum anomalous Hall effects in MnBi2Te4 films
Jiaheng Li, Quansheng Wu, Hongming Weng
The integration of ferroelectric and topological materials offers a promising avenue for advancing the development of quantum material devices. In this work, we explore the strong…
cond-mat.mes-hall2025★ 3 cited
High-Chern-number Quantum anomalous Hall insulators in mixing-stacked MnBiTe thin films
Jiaheng Li, Quansheng Wu, Hongming Weng
Quantum anomalous Hall (QAH) insulators are characterized by vanishing longitudinal resistance and quantized Hall resistance in the absence of an external magnetic field. Among the…
cond-mat.mtrl-sci2025★ 13 cited
Stacking-dependent Electronic and Topological Properties in van der Waals Antiferromagnet MnBiTe Films
Jiaheng Li, Quansheng Wu, Hongming Weng
Combining first-principles calculations and tight-binding Hamiltonians, we study the stack-dependent behaviour of electronic and topological properties of layered antiferromagnet M…