8 citations · 8 across the 2 of their papers we have counts for
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cond-mat.mtrl-sci2025
On the origin of the E1 electron trap level in GaN and dilute AlxGa1-xN films
Piotr Kruszewski, Jose Coutinho, Vladimir P. Markevich +6
The results of high-resolution Laplace deep-level transient spectroscopy (L-DLTS) measurements applied to the E1 and FeGa electron traps in dilute AlxGa1-xN films (x = 0.063), grow…
cond-mat.mtrl-sci2024★ 8 cited
Hydrogen reactions with dopants and impurities in solar silicon from first principles
José Coutinho, Diana Gomes, Vitor J. B. Torres +3
We present a theoretical account of some of the most likely hydrogen-related reactions with impurities in n-type and p-type solar-grade silicon. These include reactions with dopant…