most citedStrain distribution in GaN/AlN superlattices grown on AlN/sapphire templates: comparison of X-ray diffraction and photoluminescence studies

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cond-mat.mes-hall2025

ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires

Stanislav Tiagulskyi, Roman Yatskiv, Marta Sobanska +3

Self-assembled GaN nanowires are typically grown on Si substrates with convenient nucleation layers. Light-emitting devices based on arrays of GaN nanowires require that the nuclea…