1 citations · 1 across the 2 of their papers we have counts for
3 papers
PAMBE growth of GaN nanowires on metallic ZrN buffers -- a critical impact of ZrN layer thickness on the growth temperature
Karol Olszewski, Zbigniew R. Zytkiewicz, Aleksandra Wierzbicka +2
An impact of thin metallic ZrN layers on Si and sapphire wafers on substrate temperature during MBE growth of GaN nanowires is studied. Using nucleation kinetics of GaN as a sensit…
Strain distribution in GaN/AlN superlattices grown on AlN/sapphire templates: comparison of X-ray diffraction and photoluminescence studies
Aleksandra Wierzbicka, Agata Kaminska, Kamil Sobczak +5
Series of GaN/AlN superlattices (SLs) with various periods and the same thicknesses of GaN quantum wells and AlN barriers have been investigated. X-ray diffraction, photoluminescen…
ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires
Stanislav Tiagulskyi, Roman Yatskiv, Marta Sobanska +3
Self-assembled GaN nanowires are typically grown on Si substrates with convenient nucleation layers. Light-emitting devices based on arrays of GaN nanowires require that the nuclea…