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cond-mat.mes-hall2025
Hole-spin qubits in germanium beyond the single-particle regime
Andrea Secchi, Gaia Forghieri, Paolo Bordone +3
The intense simulation efforts on hole-spin qubits in germanium have so far focused primarily on singly occupied quantum dots. Here, we theoretically investigate three-hole qubits…
cond-mat.mes-hall2024★ 1 cited
Giant Rabi frequencies between qubit and excited hole states in silicon quantum dots
E. Fanucchi, G. Forghieri, A. Secchi +2
Holes in Si quantum dots are being investigated for the implementation of electrically addressable spin qubits. In this perspective, the attention has been focused on the electric-…
cond-mat.mes-hall2023★ 3 cited
Envelope-function theory of inhomogeneous strain in semiconductor nanostructures
Andrea Secchi, Filippo Troiani
Strain represents an ubiquitous feature in semiconductor heterostructures, and can be engineered by different means in order to improve the properties of various devices, including…