8 citations · 10 across the 10 of their papers we have counts for
7 papers · 1 filter
Hybrid-parity sliding multiferroics
Zhenzhou Guo, Jiangtao Yu, Shibo Fang +6
In this work, we introduce a class of hybrid-parity sliding multiferroics in which the spontaneous ferroelectric polarization is coupled to certain nonrelativistic spin splitting c…
Ferroelectric Band Twinning from Pair-State Symmetry
Shibo Fang, Jianhua Wang, Zhenzhou Guo +7
Ferroelectric switching provides a nonvolatile way to control electronic structures, but a general symmetry rule connecting the full Bloch bands of two switchable polarization stat…
Altermagnetic Flatband-Driven Fermi Surface Geometry for Giant Tunneling Magnetoresistance
Xingyue Yang, Shibo Fang, Zongmeng Yang +3
Altermagnetism, characterized by zero net magnetization and symmetry-protected spin-split band structures, has recently emerged as a promising platform for spintronics. In altermag…
Computational Design of Two-Dimensional MoSiN Family Field-Effect Transistor for Future Ångström-Scale CMOS Technology Nodes
Che Chen Tho, Zongmeng Yang, Shibo Fang +9
Advancing complementary metal-oxide-semiconductor (CMOS) technology into the sub-1-nm angström-scale technology nodes is expected to involve alternative semiconductor channel mater…
Pressure-Driven Metallicity in Ångström-Thickness 2D Bismuth and Layer-Selective Ohmic Contact to MoS2
Shuhua Wang, Shibo Fang, Qiang Li +8
Recent fabrication of two-dimensional (2D) metallic bismuth (Bi) via van der Waals (vdW) squeezing method opens a new avenue to ultrascaling metallic materials into the ångström-th…
Ferroelastic Altermagnetism
Rui Peng, Shibo Fang, Pin Ho +3
Synergizing altermagnetism and other ferroic orders, such as ferroelectric switchable altermagnetism [Phys. Rev. Lett. 134, 106801 (2025) and ibid. 106802 (2025)], offers an effect…
Sub-5 nm Gate-All-Around InP Nanowire Transistors Towards High-Performance Devices
Linqiang Xu, Lianqiang Xu, Qiuhui Li +7
Gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability than that of the conventional FinFET a…