1 citations · 1 across the 4 of their papers we have counts for
7 papers
Altermagnetic Flatband-Driven Fermi Surface Geometry for Giant Tunneling Magnetoresistance
Xingyue Yang, Shibo Fang, Zongmeng Yang +3
Altermagnetism, characterized by zero net magnetization and symmetry-protected spin-split band structures, has recently emerged as a promising platform for spintronics. In altermag…
Computational Design of Two-Dimensional MoSiN Family Field-Effect Transistor for Future Ångström-Scale CMOS Technology Nodes
Che Chen Tho, Zongmeng Yang, Shibo Fang +9
Advancing complementary metal-oxide-semiconductor (CMOS) technology into the sub-1-nm angström-scale technology nodes is expected to involve alternative semiconductor channel mater…
Pressure-Driven Metallicity in Ångström-Thickness 2D Bismuth and Layer-Selective Ohmic Contact to MoS2
Shuhua Wang, Shibo Fang, Qiang Li +8
Recent fabrication of two-dimensional (2D) metallic bismuth (Bi) via van der Waals (vdW) squeezing method opens a new avenue to ultrascaling metallic materials into the ångström-th…
Ferroelastic Altermagnetism
Rui Peng, Shibo Fang, Pin Ho +3
Synergizing altermagnetism and other ferroic orders, such as ferroelectric switchable altermagnetism [Phys. Rev. Lett. 134, 106801 (2025) and ibid. 106802 (2025)], offers an effect…
Unconventional tunnel magnetoresistance scaling with altermagnets
Zongmeng Yang, Xingyue Yang, Jianhua Wang +7
In conventional magnetic tunnel junctions (MTJs), the tunnel magnetoresistance (TMR) typically increases with barrier thickness as electron transmission in the antiparallel configu…
Bilayer TeO2: The First Oxide Semiconductor with Symmetric Sub-5-nm NMOS and PMOS
Linqiang Xu, Liya Zhao, Chit Siong Lau +7
Wide bandgap oxide semiconductors are very promising channel candidates for next-generation electronics due to their large-area manufacturing, high-quality dielectrics, low contact…