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Scaling Nanoribbon Transistors with Monolayer Transition Metal Dichalcogenides
Tara Peña, Anton E. O. Persson, Andrey Krayev +13
Nanoscale transistors require aggressive reduction of all channel dimensions: length, width, and thickness. While monolayer two-dimensional semiconductors (2DS) offer ultimate thic…
Low Resistance P-type Contacts to Monolayer WSe through Chlorinated Solvent Doping
Lauren Hoang, Robert K. A. Bennett, Anh Tuan Hoang +7
Tungsten diselenide (WSe) is a promising p-type semiconductor limited by high contact resistance () and the lack of a reliable doping strategy. Here, we demonstra…
Synthesis-related nanoscale defects in Mo-based Janus monolayers revealed by cross-correlated AFM and TERS imaging
Tianyi Zhang, Andrey Krayev, Tilo H. Yang +14
Two-dimensional (2D) Janus transition metal dichalcogenides (TMDs) are promising candidates for various applications in non-linear optics, energy harvesting, and catalysis. These m…
Resolving the Electron Plume within a Scanning Electron Microscope
Francis M. Alcorn, Christopher Perez, Eric J. Smoll +7
Scanning electron microscopy (SEM), a century-old technique, is today a ubiquitous method of imaging the surface of nanostructures. However, most SEM detectors simply count the num…
Enabling P-type Conduction in Bilayer WS2 with NbP Topological Semimetal Contacts
Lauren Hoang, Asir Intisar Khan, Robert K. A. Bennett +7
Two-dimensional (2D) semiconductors are promising for low-power complementary metal oxide semiconductor (CMOS) electronics, which require ultrathin n- and p-type transistor channel…
Excitation laser energy dependence of the gap-mode TERS spectra of WS and MoS on silver
Andrey Krayev, Eleonora Isotta, Lauren Hoang +8
We present a systematic study of the dependence of gap mode tip-enhanced Raman scattering (TERS) of mono- and bi-layer WS and MoS as a function of excitation laser energy.…