Scaling Nanoribbon Transistors with Monolayer Transition Metal Dichalcogenides

Abstract

Nanoscale transistors require aggressive reduction of all channel dimensions: length, width, and thickness. While monolayer two-dimensional semiconductors (2DS) offer ultimate thickness scaling, good performance has largely been achieved only in micrometer-wide channels. Here, we demonstrate both $n$- and $p$-type nanoribbon transistors based on monolayer 2DS, fabricated using a multi-patterning process, reaching channel widths and lengths down to 25-30 nm. 'Anchored' contacts improve device yield, while nanoscale imaging, including tip-enhanced photoluminescence, reveals minimal edge degradation. The devices reach on-state currents up to 560, 420, and 130 $\hat{I}¼$A $\hat{I}¼$m${}^{-1}$ at 1 V drain-to-source voltage for $n$-type MoS${}_2$, WS${}_2$, and $p$-type WSe${}_2$, respectively, integrated with thin high-$\hat{I}º$ dielectrics. These results surpass prior reports for single-gated nanoribbons, the WS${}_2$ by over 100 times, even in normally off (enhancement-mode) transistors. Taken together, these findings suggest that top down patterned 2DS nanoribbons are promising building blocks for future nanosheet transistors.

22 pages, 9 figures