8 papers
Scaling Nanoribbon Transistors with Monolayer Transition Metal Dichalcogenides
Tara Peña, Anton E. O. Persson, Andrey Krayev +13
Nanoscale transistors require aggressive reduction of all channel dimensions: length, width, and thickness. While monolayer two-dimensional semiconductors (2DS) offer ultimate thic…
Interfacial control of hot-carrier extraction and photostability in two-dimensional materials
Claudia Gollner, Mohammad Taghinejad, Chenyi Xia +8
Two-dimensional transition metal dichalcogenides (TMDCs) are promising materials for next-generation optoelectronic devices, yet their implementation is hindered by limited sample…
High-current p-type transistors from precursor-engineered synthetic monolayer WSe
Anh Tuan Hoang, Kathryn Neilson, Kaikui Xu +11
Monolayer tungsten diselenide (WSe) is a leading candidate for nanoscale complementary logic. However, high defect densities introduced during thin-film growth and device fabri…
Deep Learning to Automate Parameter Extraction and Model Fitting of Two-Dimensional Transistors
Robert K. A. Bennett, Jan-Lucas Uslu, Harmon F. Gault +8
We present a deep learning approach to extract physical parameters (e.g., mobility, Schottky contact barrier height, defect profiles) of two-dimensional (2D) transistors from elect…
Wide-field Hyperspectral Optical Microscopy for Rapid Characterization of Two-Dimensional Semiconductors and Heterostructures
Zhenghan Peng, Adeyemi Uthman, Zhepeng Zhang +4
Electronic and optoelectronic applications of two-dimensional (2D) semiconductors demand precise control over material quality, including thickness, composition, doping, and defect…
Low Resistance P-type Contacts to Monolayer WSe through Chlorinated Solvent Doping
Lauren Hoang, Robert K. A. Bennett, Anh Tuan Hoang +7
Tungsten diselenide (WSe) is a promising p-type semiconductor limited by high contact resistance () and the lack of a reliable doping strategy. Here, we demonstra…