6 papers
Scaling Nanoribbon Transistors with Monolayer Transition Metal Dichalcogenides
Tara Peña, Anton E. O. Persson, Andrey Krayev +13
Nanoscale transistors require aggressive reduction of all channel dimensions: length, width, and thickness. While monolayer two-dimensional semiconductors (2DS) offer ultimate thic…
Deep Learning to Automate Parameter Extraction and Model Fitting of Two-Dimensional Transistors
Robert K. A. Bennett, Jan-Lucas Uslu, Harmon F. Gault +8
We present a deep learning approach to extract physical parameters (e.g., mobility, Schottky contact barrier height, defect profiles) of two-dimensional (2D) transistors from elect…
Low Resistance P-type Contacts to Monolayer WSe through Chlorinated Solvent Doping
Lauren Hoang, Robert K. A. Bennett, Anh Tuan Hoang +7
Tungsten diselenide (WSe) is a promising p-type semiconductor limited by high contact resistance () and the lack of a reliable doping strategy. Here, we demonstra…
Synthesis-related nanoscale defects in Mo-based Janus monolayers revealed by cross-correlated AFM and TERS imaging
Tianyi Zhang, Andrey Krayev, Tilo H. Yang +14
Two-dimensional (2D) Janus transition metal dichalcogenides (TMDs) are promising candidates for various applications in non-linear optics, energy harvesting, and catalysis. These m…
Mobility and Threshold Voltage Extraction in Transistors with Gate-Voltage-Dependent Contact Resistance
Robert K. A. Bennett, Lauren Hoang, Connor Cremers +2
The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often expe…
Resolving the Electron Plume within a Scanning Electron Microscope
Francis M. Alcorn, Christopher Perez, Eric J. Smoll +7
Scanning electron microscopy (SEM), a century-old technique, is today a ubiquitous method of imaging the surface of nanostructures. However, most SEM detectors simply count the num…