A. Hoang

most citedScaling Nanoribbon Transistors with Monolayer Transition Metal Dichalcogenides

1 citations · 1 across the 1 of their papers we have counts for

collaborators

3 papers

cond-mat.mtrl-sci2026★ 1 cited

Scaling Nanoribbon Transistors with Monolayer Transition Metal Dichalcogenides

Tara PeÃ±a, Anton E. O. Persson, Andrey Krayev +13

Nanoscale transistors require aggressive reduction of all channel dimensions: length, width, and thickness. While monolayer two-dimensional semiconductors (2DS) offer ultimate thic…

cond-mat.mtrl-sci2025

High-current p-type transistors from precursor-engineered synthetic monolayer WSe $_{2}$

Anh Tuan Hoang, Kathryn Neilson, Kaikui Xu +11

Monolayer tungsten diselenide (WSe $_{2}$ ) is a leading candidate for nanoscale complementary logic. However, high defect densities introduced during thin-film growth and device fabri…

cond-mat.mtrl-sci2025

Low Resistance P-type Contacts to Monolayer WSe $_{2}$ through Chlorinated Solvent Doping

Lauren Hoang, Robert K. A. Bennett, Anh Tuan Hoang +7

Tungsten diselenide (WSe $_{2}$ ) is a promising p-type semiconductor limited by high contact resistance ( $R_{C}$ ) and the lack of a reliable doping strategy. Here, we demonstra…

Scaling Nanoribbon Transistors with Monolayer Transition Metal Dichalcogenides

High-current p-type transistors from precursor-engineered synthetic monolayer WSe2​

Low Resistance P-type Contacts to Monolayer WSe2​ through Chlorinated Solvent Doping

High-current p-type transistors from precursor-engineered synthetic monolayer WSe $_{2}$

Low Resistance P-type Contacts to Monolayer WSe $_{2}$ through Chlorinated Solvent Doping