Jens Brede

activity

20242026

most citedCharacterizing the chemical potential disorder in the topological insulator (Bi

_{1 - x}

_{x}

)

_{2}

_{3}

thin films

6 citations · 7 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.supr-con2026

Imaging geometry- and phase-controlled spectra in a surface-state Andreev cavity

Adrian Greichgauer, Yoichi Ando, Jens Brede

Andreev cavities provide a setting in which superconducting proximity spectra are shaped by phase-coherent electron-hole motion along extended trajectories. While such Andreev phys…

cond-mat.mes-hall2026

Topological insulator single-electron transistors for charge sensing applications

Omargeldi Atanov, Junya Feng, Jens Brede +2

We present topological insulator (TI)-based single-electron transistors (SETs) as magnetic-field-compatible charge sensing devices that are easily integrable with TI-superconductor…

cond-mat.mtrl-sci2025

Ex Situ Fabrication of Superconducting Nanostructures for Low-Temperature STM

Adrian Greichgauer, Roozbeh Yazdanpanah, Alexey Taskin +3

Nanofabrication of topological insulator (TI) devices is essential for accessing edge and interface states, but conventional lithography and etching compromise the atomically clean…

cond-mat.mes-hall2025

Quasiparticle interference on the surface of Bi $_{2}$ Se $_{3}$ terminated (PbSe) $_{5}$ (Bi $_{2}$ Se $_{3}$ ) $_{6}$

Mahasweta Bagchi, Philipp Rüßmann, Gustav Bihlmayer +3

Among the family of topological superconductors derived from {\BiSe}, $Cu_{x} (PbSe)_{5} (Bi_{2} Se_{3})_{6}$ is unique in its surface termination of…

cond-mat.mes-hall2024★ 6 cited

Characterizing the chemical potential disorder in the topological insulator (Bi $_{1 - x}$ Sb $_{x}$ ) $_{2}$ Te $_{3}$ thin films

Jens Brede, Mahasweta Bagchi, Adrian Greichgauer +6

We use scanning tunneling microscopy and spectroscopy under ultra-high vacuum and down to 1.7 K to study the local variations of the chemical potential on the surface of the topolo…

cond-mat.mtrl-sci2024★ 1 cited

Selective-Area Epitaxy of Bulk-Insulating (Bi $_{x}$ Sb $_{1 - x}$ ) $_{2}$ Te $_{3}$ Films and Nanowires by Molecular Beam Epitaxy

Gertjan Lippertz, Oliver Breunig, Rafael Fister +5

The selective-area epitaxy (SAE) is a useful technique to grow epitaxial films with a desired shape on a pre-patterned substrate. Although SAE of patterned topological-insulator (T…

Imaging geometry- and phase-controlled spectra in a surface-state Andreev cavity

Topological insulator single-electron transistors for charge sensing applications

Ex Situ Fabrication of Superconducting Nanostructures for Low-Temperature STM

Quasiparticle interference on the surface of Bi2​Se3​ terminated (PbSe)5​(Bi2​Se3​)6​

Characterizing the chemical potential disorder in the topological insulator (Bi1−x​Sbx​)2​Te3​ thin films

Selective-Area Epitaxy of Bulk-Insulating (Bix​Sb1−x​)2​Te3​ Films and Nanowires by Molecular Beam Epitaxy

Quasiparticle interference on the surface of Bi $_{2}$ Se $_{3}$ terminated (PbSe) $_{5}$ (Bi $_{2}$ Se $_{3}$ ) $_{6}$

Characterizing the chemical potential disorder in the topological insulator (Bi $_{1 - x}$ Sb $_{x}$ ) $_{2}$ Te $_{3}$ thin films

Selective-Area Epitaxy of Bulk-Insulating (Bi $_{x}$ Sb $_{1 - x}$ ) $_{2}$ Te $_{3}$ Films and Nanowires by Molecular Beam Epitaxy