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cond-mat.mes-hall2025
Modeling the g-factors, hyperfine interaction and optical properties of semiconductor QDs: the atomistic and eight-band approaches
Krzysztof Gawarecki, Alina Garbiec, Jakub Stanecki +1
We present a detailed comparative study of two important theoretical approaches: atomistic spds tight-binding and continuum eight-band methods, for modeling…
quant-ph2025
Atomistic tight-binding Hartree-Fock calculations of multielectron configurations in P-doped silicon devices: wavefunction reshaping
Maicol A. Ochoa, Keyi Liu, Piotr Różański +2
Donor-based quantum devices in silicon are attractive platforms for universal quantum computing and analog quantum simulations. The nearly-atomic precision in dopant placement prom…