5 papers
Thermal Processing Limits in Oxide-Channel Ferroelectric Field Effect Transistors
Lance Fernandes, Yu-Hsin Kuo, Chengyang Zhang +15
In this work, we report a systematic study of the impact of high-temperature post-capping thermal annealing on the memory characteristics of Oxide-semiconductor channel ferroelectr…
ALD Oxidant as A Tuning Knob for Memory Window Expansion in Ferroelectric FETs for Vertical NAND Applications
Ranie Jeyakumar, Prasanna Venkatesan, Lance Fernandes +12
Dielectric inserts are widely used to expand the memory window (MW) in ferroelectric FETs (FeFETs) for vertical NAND applications, with prior efforts focused primarily on material…
ALD-Derived WO3-x Leads to Nearly Wake-Up-Free Ferroelectric Hf0.5Zr0.5O2 at Elevated Temperatures
Nashrah Afroze, Jihoon Choi, Salma Soliman +10
Breaking the memory wall in advanced computing architectures will require complex 3D integration of emerging memory materials such as ferroelectrics-either within the back-end-of-l…
Pulse-Mode Operation and Reliability of BEOL-Compatible Ferroelectric Non-Volatile Capacitive Memories with Amorphous Oxide Semiconductor Channels
Junmo Lee, Chengyang Zhang, Tae-Hyeon Kim +2
Non-volatile capacitive memories (nvCAPs) exhibiting AC small-signal capacitance on/off ratio (Con/Coff) with non-destructive read have emerged as a promising device for next-gener…
Revealing Phonon Bridge Effect for Amorphous vs Crystalline Metal-Silicide Layers at Si/Ti Interfaces by a Machine Learning Potential
Mayur Singh, Lokanath Patra, Chengyang Zhang +4
Metal-semiconductor interfaces play a central role in micro and nano-electronic devices as heat dissipation or temperature drop across these interfaces can significantly affect dev…