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20232026
most citedCharacterisation of Crystalline Defects in 4H Silicon Carbide using DLTS and TSC

3 citations · 7 across the 6 of their papers we have counts for

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5 papers · 1 filter

physics.ins-det2026

Gain-Layer Project

Niels G. Sorgenfrei, Anna Rita Altamura, Cristina Besleaga +18

Gain-layer degradation from exposure to radiation limits the use of Low-Gain Avalanche Diodes (LGADs) in high energy particle physics detector experiments. Proper understanding of…

physics.ins-det2025★ 3 cited

Characterisation of Crystalline Defects in 4H Silicon Carbide using DLTS and TSC

Niels Sorgenfrei, Elias Arnqvist, Yana Gurimskaya +4

Future hadron collider experiments will require sensing materials that withstand stronger radiation fields. Therefore, either a frequent replacement of detectors, a significant inc…

physics.ins-det2024★ 2 cited

Characterisation and simulation of stitched CMOS strip sensors

Naomi Davis, Jan-Hendrik Arling, Marta Baselga +20

In high-energy physics, there is a need to investigate alternative silicon sensor concepts that offer cost-efficient, large-area coverage. Sensors based on CMOS imaging technology…

physics.ins-det2023

Characterization, Simulation and Test Beam Data Analysis of Stitched Passive CMOS Strip Sensors

I. Zatocilova, J. -H. Arling, M. Baselga +19

In the passive CMOS Strips Project, strip sensors were designed at the University of Bonn and produced by LFoundry in 150 nm technology, with an additional backside processing from…

physics.ins-det2023★ 1 cited

Understanding the Frequency Dependence of Capacitance Measurements of Irradiated Silicon Detectors

Sven Mägdefessel, Riccardo Mori, Niels Sorgenfrei +1

Capacitance-voltage (CV) measurements are a widely used technique in silicon detector physics. It gives direct information about the full depletion voltage and the effective doping…