3 citations · 7 across the 6 of their papers we have counts for
7 papers
Gain-Layer Project
Niels G. Sorgenfrei, Anna Rita Altamura, Cristina Besleaga +18
Gain-layer degradation from exposure to radiation limits the use of Low-Gain Avalanche Diodes (LGADs) in high energy particle physics detector experiments. Proper understanding of…
On the nature and charge state of the X-Defect, a radiation-induced Silicon defect with field-enhanced charge carrier emission
Niels Sorgenfrei, Yana Gurimskaya, Anja Himmerlich +4
The elusive X-Defect, a defect found in low-resistivity -type Silicon after irradiation, observed as a low-temperature shoulder of the $\mathrm{B}_\mathrm{i}\mathrm{O}_\mathrm{i…
Characterisation of Crystalline Defects in 4H Silicon Carbide using DLTS and TSC
Niels Sorgenfrei, Elias Arnqvist, Yana Gurimskaya +4
Future hadron collider experiments will require sensing materials that withstand stronger radiation fields. Therefore, either a frequent replacement of detectors, a significant inc…
Defects and acceptor removal in 60Co γ-irradiated p-type silicon
Anja Himmerlich, Núria Castelló-Mor, Esteban Currás-Rivera +11
Boron-doped silicon detectors used in high radiation environments like the future HL-LHC show a degradation in device performance due to the radiation induced deactivation of the a…
Characterisation and simulation of stitched CMOS strip sensors
Naomi Davis, Jan-Hendrik Arling, Marta Baselga +20
In high-energy physics, there is a need to investigate alternative silicon sensor concepts that offer cost-efficient, large-area coverage. Sensors based on CMOS imaging technology…
Characterization, Simulation and Test Beam Data Analysis of Stitched Passive CMOS Strip Sensors
I. Zatocilova, J. -H. Arling, M. Baselga +19
In the passive CMOS Strips Project, strip sensors were designed at the University of Bonn and produced by LFoundry in 150 nm technology, with an additional backside processing from…
Understanding the Frequency Dependence of Capacitance Measurements of Irradiated Silicon Detectors
Sven Mägdefessel, Riccardo Mori, Niels Sorgenfrei +1
Capacitance-voltage (CV) measurements are a widely used technique in silicon detector physics. It gives direct information about the full depletion voltage and the effective doping…