1 citations · 1 across the 8 of their papers we have counts for
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Investigation of GeSn aspect ratio trapping growth up to 8% Sn
Hryhorii Stanchu, Quang Minh Thai, Fernando M. de Oliveira +10
Aspect ratio trapping (ART) growth of germanium-tin (GeSn) is a promising approach to target important objectives on the quest towards commercialization of complementary metal-oxid…
Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations
Aida Sheibani, Mohammad Zamani, Charles Paillard +9
Previous studies of the growth of two-dimensional (2D) gallium selenide (GaSe) by molecular beam epitaxy (MBE) on a gallium arsenide (GaAs) three-dimensional (3D) substrate have re…
Neutralizing Optical Defects in GeSn
Nirosh M. Eldose, Dinesh Baral, Diandian Zhang +7
Reports of photoluminescence from GeSn grown on Ge substrates by molecular beam epitaxy have been limited. We find that one limiting factor to observing photoluminescence is due to…
Atomic short-range order: a new degree of freedom for band engineering of GeSn semiconductor alloys
Shang Liu, Yunfan Liang, Nirosh M. Eldose +18
Chemical short-range order (SRO) in alloys denotes the statistical preference or avoidance between atomic species on neighboring lattice sites. Here, we highlight SRO as a powerful…