activity
20242026
most citedDirect Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth

1 citations · 1 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.mtrl-sci2026

Investigation of GeSn aspect ratio trapping growth up to 8% Sn

Hryhorii Stanchu, Quang Minh Thai, Fernando M. de Oliveira +10

Aspect ratio trapping (ART) growth of germanium-tin (GeSn) is a promising approach to target important objectives on the quest towards commercialization of complementary metal-oxid…

physics.app-ph2026

Study of GeSn Selective Area Growth with Demonstration of SWIR Light Detection

Hryhorii Stanchu, Quang Minh Thai, Rajesh Kumar +16

As germanium-tin (GeSn) epitaxial growth quality continuously improves, the search for an efficient integration strategy of GeSn optoelectronics devices into complementary metal-ox…

cond-mat.mtrl-sci2026

Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations

Aida Sheibani, Mohammad Zamani, Charles Paillard +9

Previous studies of the growth of two-dimensional (2D) gallium selenide (GaSe) by molecular beam epitaxy (MBE) on a gallium arsenide (GaAs) three-dimensional (3D) substrate have re…

cond-mat.mtrl-sci2025

Neutralizing Optical Defects in GeSn

Nirosh M. Eldose, Dinesh Baral, Diandian Zhang +7

Reports of photoluminescence from GeSn grown on Ge substrates by molecular beam epitaxy have been limited. We find that one limiting factor to observing photoluminescence is due to…

physics.app-ph2025

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect

Justin Rudie, Huong Tran, Yang Zhang +10

SiGeSn-based optoelectronic devices, which operate across a broad infrared wavelength range, have attracted significant attention, particularly heterostructures utilizing quantum w…

physics.app-ph2025★ 1 cited

Direct Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth

Diandian Zhang, Nirosh M. Eldose, Dinesh Baral +9

Group IV alloys of GeSn have gained significant attention for electronic and optoelectronic applications on a Si platform due to their compatibility with existing CMOS technology,…

physics.optics2024

Study of Group III-V Waveguides on Sapphire Platform for Photonic Integrated Circuits

Manoj Kumar Shah, Richard A. Soref, Diandian Zhang +4

Photonic integrated circuits (PICs) have been acknowledged as the promising platforms for the applications in data communication, Lidar in autonomous driving vehicles, innovative s…

cond-mat.mtrl-sci2024

Atomic short-range order: a new degree of freedom for band engineering of GeSn semiconductor alloys

Shang Liu, Yunfan Liang, Nirosh M. Eldose +18

Chemical short-range order (SRO) in alloys denotes the statistical preference or avoidance between atomic species on neighboring lattice sites. Here, we highlight SRO as a powerful…