most citedDirect Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth

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cond-mat.mtrl-sci2025

Neutralizing Optical Defects in GeSn

Nirosh M. Eldose, Dinesh Baral, Diandian Zhang +7

Reports of photoluminescence from GeSn grown on Ge substrates by molecular beam epitaxy have been limited. We find that one limiting factor to observing photoluminescence is due to…