most citedDirect Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth

1 citations · 1 across the 3 of their papers we have counts for

collaborators
Showing cond-mat.mtrl-sciShow all

2 papers · 1 filter

cond-mat.mtrl-sci2025

Neutralizing Optical Defects in GeSn

Nirosh M. Eldose, Dinesh Baral, Diandian Zhang +7

Reports of photoluminescence from GeSn grown on Ge substrates by molecular beam epitaxy have been limited. We find that one limiting factor to observing photoluminescence is due to…

cond-mat.mtrl-sci2024

Atomic short-range order: a new degree of freedom for band engineering of GeSn semiconductor alloys

Shang Liu, Yunfan Liang, Nirosh M. Eldose +18

Chemical short-range order (SRO) in alloys denotes the statistical preference or avoidance between atomic species on neighboring lattice sites. Here, we highlight SRO as a powerful…