1 citations · 1 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2025
Neutralizing Optical Defects in GeSn
Nirosh M. Eldose, Dinesh Baral, Diandian Zhang +7
Reports of photoluminescence from GeSn grown on Ge substrates by molecular beam epitaxy have been limited. We find that one limiting factor to observing photoluminescence is due to…
physics.app-ph2025★ 1 cited
Direct Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth
Diandian Zhang, Nirosh M. Eldose, Dinesh Baral +9
Group IV alloys of GeSn have gained significant attention for electronic and optoelectronic applications on a Si platform due to their compatibility with existing CMOS technology,…