1 citations · 1 across the 3 of their papers we have counts for
3 papers
Neutralizing Optical Defects in GeSn
Nirosh M. Eldose, Dinesh Baral, Diandian Zhang +7
Reports of photoluminescence from GeSn grown on Ge substrates by molecular beam epitaxy have been limited. We find that one limiting factor to observing photoluminescence is due to…
Direct Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth
Diandian Zhang, Nirosh M. Eldose, Dinesh Baral +9
Group IV alloys of GeSn have gained significant attention for electronic and optoelectronic applications on a Si platform due to their compatibility with existing CMOS technology,…
Atomic short-range order: a new degree of freedom for band engineering of GeSn semiconductor alloys
Shang Liu, Yunfan Liang, Nirosh M. Eldose +18
Chemical short-range order (SRO) in alloys denotes the statistical preference or avoidance between atomic species on neighboring lattice sites. Here, we highlight SRO as a powerful…