6 papers
Net and Hidden Spin-Valley Locking Enable Ultrahigh Hole Mobility in Covalent Bulk WN
Rong-Tian Pang, Zhongjuan Han, Jiayi Gong +3
High carrier mobility at room temperature underpins high-performance electronics, yet high hole mobility remains rare in bulk semiconductors. Spin-valley locking can suppress inter…
Ultrahigh Intrinsic Hole Mobilities in N (= Mo and W) at Room Temperature
Zhongjuan Han, Rong-Tian Pang, Wu Xiong +3
High-mobility -type semiconductors are essential for advanced electronic devices but remain scarce. Here, using a hierarchical screening framework that combines first-principles…
Free-carrier screening unlocks high electron mobility in ultrawide bandgap semiconductor CaSnO
Jiayi Gong, Chuanyu Zhang, Wenjie Hu +1
Alkaline earth stannates have emerged as promising transparent conducting oxides due to their wide band gaps and high room-temperature electron mobilities. Among them, CaSnO po…
Phonons Drive the Topological Phase Transition in Quasi-One-Dimensional BiI
Wenjie Hu, Jiayi Gong, Yuhui Qiu +3
Quasi-one-dimensional bismuth halides offer an exceptional platform for exploring diverse topological phases, yet the nature of the room-temperature topological phase transition in…
Shear-resistant topology in quasi one-dimensional van der Waals material BiBr
Jonathan K. Hofmann, Hoyeon Jeon, Saban M. Hus +10
BiBr is a prototypical quasi one-dimensional (1D) material in which covalently bonded bismuth bromide chains are arranged in parallel, side-by-side and layer-by-layer, with…
Excitonic Instability in Ta2Pd3Te5 Monolayer
Jingyu Yao, Haohao Sheng, Ruihan Zhang +7
By systematic theoretical calculations, we have revealed an excitonic insulator (EI) in the Ta2Pd3Te5 monolayer. The bulk Ta2Pd3Te5 is a van der Waals (vdW) layered compound, where…