Kwan-Ho Kim

activity

20232025

most citedDemonstration of highly scaled AlScN ferroelectric diode memory with storage density > 100 Mbit/mm

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2 citations · 7 across the 8 of their papers we have counts for

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physics.app-ph2024★ 1 cited

High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities

Seunguk Song, Kwan-Ho Kim, Rachael Keneipp +7

Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-gene…

physics.app-ph2023

Scalable and Stable Ferroelectric Non-Volatile Memory at > 500 $^{\circ}$ C

Dhiren K. Pradhan, David C. Moore, Gwangwoo Kim +12

Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 $^{\circ}$ C are currently non-existent and remains a critically unmet challenge in the development o…

High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities

Scalable and Stable Ferroelectric Non-Volatile Memory at > 500 ∘C

Scalable and Stable Ferroelectric Non-Volatile Memory at > 500 $^{\circ}$ C