220 citations · 406 across the 4 of their papers we have counts for
4 papers
MoS/AlScN negative capacitance field-effect transistors
Seunguk Song, Kwan-Ho Kim, Srikrishna Chakravarthi +6
AlScN (AlScN) has gained attention for its outstanding ferroelectric properties, including a high coercive field and high remnant polarization. Although AlScN-bas…
Scalable CMOS-BEOL compatible AlScN/2D Channel FE-FETs
Kwan-Ho Kim, Seyong Oh, Merrilyn Mercy Adzo Fiagbenu +14
Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurr…
High-Specific-Power Flexible Transition Metal Dichalcogenide Solar Cells
Koosha Nassiri Nazif, Alwin Daus, Jiho Hong +13
Semiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-specific-power photovoltaics due to their ultrahigh optical absorption coefficients, desirabl…
Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor
Xiwen Liu, Dixiong Wang, Jeffrey Zheng +5
In 1963, Moll and Tarui suggested that the field-effect conductance of a semiconductor could be controlled by the remanent polarization of a ferroelectric (FE) material to create a…