13 citations · 14 across the 3 of their papers we have counts for
3 papers · 1 filter
OTTER - Two Transistor - One RRAM Architecture for Reliable In-Memory-Computing in 28 nm CMOS Technology
Yang Chen, Daniele Storelli, Xinyi Zhao +20
This work presents OTTER, a 28 nm CMOS platform co-integrated with TaOx-based valence-change mechanism (VCM) RRAM, demonstrating a two-transistor-one-memristive-device (2T1R) archi…
Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive-Metal-Oxide/HfOx ReRAM via Compact Modeling
Matteo Galetta, Donato Francesco Falcone, Victoria Clerico +7
Resistive Random Access Memory (ReRAM) devices offer a promising solution for next-generation non-volatile memory and neuromorphic computing systems. Yet, existing compact models f…
Analytical Modelling of the Transport in Analog Filamentary Conductive-Metal-Oxide/HfOx ReRAM Devices
Donato Francesco Falcone, Stephan Menzel, Tommaso Stecconi +4
The recent co-optimization of memristive technologies and programming algorithms enabled neural networks training with in-memory computing systems. In this context, novel analog fi…