122 citations · 396 across the 10 of their papers we have counts for
10 papers
Synaptogen: A cross-domain generative device model for large-scale neuromorphic circuit design
Tyler Hennen, Leon Brackmann, Tobias Ziegler +5
We present a fast generative modeling approach for resistive memories that reproduces the complex statistical properties of real-world devices. To enable efficient modeling of anal…
Integration of Physics-Derived Memristor Models with Machine Learning Frameworks
Zhenming Yu, Stephan Menzel, John Paul Strachan +1
Simulation frameworks such MemTorch, DNN+NeuroSim, and aihwkit are commonly used to facilitate the end-to-end co-design of memristive machine learning (ML) accelerators. These simu…
Resistive switching acceleration induced by thermal confinement
Alexandros Sarantopoulos, Kristof Lange, Francisco Rivadulla +2
Enhancing the switching speed of oxide-based memristive devices at a low voltage level is crucial for their use as non-volatile memory and their integration into emerging computing…
Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes
Lukas Völkel, Dennis Braun, Melkamu Belete +8
The two-dimensional (2D) insulating material hexagonal boron nitride (h BN) has attracted much attention as the active medium in memristive devices due to its favorable physical pr…
NeuroHammer: Inducing Bit-Flips in Memristive Crossbar Memories
Felix Staudigl, Hazem Al Indari, Daniel Schön +6
Emerging non-volatile memory (NVM) technologies offer unique advantages in energy efficiency, latency, and features such as computing-in-memory. Consequently, emerging NVM technolo…
Intrinsic RESET speed limit of valence change memories
Moritz von Witzleben, Stefan Wiefels, Andreas Kindsmüller +7
During the last decade, valence change memory (VCM) has been extensively studied due to its promising features, such as a high endurance and fast switching times. The information i…
2022 Roadmap on Neuromorphic Computing and Engineering
Dennis V. Christensen, Regina Dittmann, Bernabé Linares-Barranco +56
Modern computation based on the von Neumann architecture is today a mature cutting-edge science. In the Von Neumann architecture, processing and memory units are implemented as sep…
Picosecond Multilevel Resistive Switching in Tantalum Oxide Thin Films
Ulrich Böttger, Moritz von Witzleben, Viktor Havel +4
The increasing demand for high-density data storage leads to an increasing interest in novel memory concepts with high scalability and the opportunity of storing multiple bits in o…
A Complementary Resistive Switch-based Crossbar Array Adder
A. Siemon, S. Menzel, R. Waser +1
Redox-based resistive switching devices (ReRAM) are an emerging class of non-volatile storage elements suited for nanoscale memory applications. In terms of logic operations, ReRAM…
Applicability of Well-Established Memristive Models for Simulations of Resistive Switching Devices
E. Linn, A. Siemon, R. Waser +1
Highly accurate and predictive models of resistive switching devices are needed to enable future memory and logic design. Widely used is the memristive modeling approach considerin…