122 citations · 396 across the 10 of their papers we have counts for
4 papers · 1 filter
Resistive switching acceleration induced by thermal confinement
Alexandros Sarantopoulos, Kristof Lange, Francisco Rivadulla +2
Enhancing the switching speed of oxide-based memristive devices at a low voltage level is crucial for their use as non-volatile memory and their integration into emerging computing…
Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes
Lukas Völkel, Dennis Braun, Melkamu Belete +8
The two-dimensional (2D) insulating material hexagonal boron nitride (h BN) has attracted much attention as the active medium in memristive devices due to its favorable physical pr…
Intrinsic RESET speed limit of valence change memories
Moritz von Witzleben, Stefan Wiefels, Andreas Kindsmüller +7
During the last decade, valence change memory (VCM) has been extensively studied due to its promising features, such as a high endurance and fast switching times. The information i…
Picosecond Multilevel Resistive Switching in Tantalum Oxide Thin Films
Ulrich Böttger, Moritz von Witzleben, Viktor Havel +4
The increasing demand for high-density data storage leads to an increasing interest in novel memory concepts with high scalability and the opportunity of storing multiple bits in o…