Akhila Mattapalli

collaborators

2 papers

cond-mat.mtrl-sci2026

4 MV/cm (010) $β$ -Ga $_{2}$ O $_{3}$ Heterojunction Diodes Realized by Low-Damage e-Beam NiO $_{x}$ Interlayers

Carl Peterson, Yizheng Liu, Chinmoy Nath Saha +3

We report on the utilization of a low-damage e-beam NiO $_{x}$ deposition process to realize field-plated heterojunction diodes (FP-HJDs) on (010) $β$ -Ga $_{2}$ O $_{3}$ films with high crit…

physics.app-ph2025

Kilovolt-Class $β - G a_{2} O_{3}$ Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally $1 0^{15}$ $c m^{- 3}$ Doped Drift Layers

Carl Peterson, Chinmoy Nath Saha, Rachel Kahler +4

We report on the growth optimization of intentionally low-doped ( $1 0^{15}$ $c m^{- 3}$ ) high-quality $β - G a_{2} O_{3}$ drift layers up to 10 $μ m$ thick via MOCVD and the fabrication of kil…

4 MV/cm (010) β-Ga2​O3​ Heterojunction Diodes Realized by Low-Damage e-Beam NiOx​ Interlayers

Kilovolt-Class β−Ga2​O3​ Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally 1015 cm−3 Doped Drift Layers

4 MV/cm (010) $β$ -Ga $_{2}$ O $_{3}$ Heterojunction Diodes Realized by Low-Damage e-Beam NiO $_{x}$ Interlayers

Kilovolt-Class $β - G a_{2} O_{3}$ Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally $1 0^{15}$ $c m^{- 3}$ Doped Drift Layers