3 citations · 3 across the 4 of their papers we have counts for
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cond-mat.mtrl-sci2026
Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN
Zekun Hu, Haiwen Zhang, Rajeev Kumar Rai +12
Ferroelectric AlScN is promising for CMOS-compatible non-volatile memory, but thickness scaling is limited by leakage, premature breakdown, and defect-mediated failure. Here we sho…
cond-mat.mtrl-sci2025
Low-Field Ferroelectricity in 10 nm AlBScN Thin Films
Xiaolei Tong, Pedram Yousefian, Ziyi Wang +5
Ferroelectric aluminum scandium nitride (Al1-xScxN, AlScN) offers CMOS-compatible integration but suffers from high coercive fields and leakage currents that hinder thickness scali…
cond-mat.mtrl-sci2025★ 3 cited
Leakage Suppression Across Temperature in Al1-xScxN Thin Film Ferroelectric Capacitors through Boron Incorporation
Pedram Yousefian, Xiaolei Tong, Jonathan Tan +3
This paper presents high-temperature ferroelectric characterization of 40~nm AlBScN (AlBScN) thin film capacitors grown by co-sputtering AlB and…