26 citations · 57 across the 11 of their papers we have counts for
5 papers · 1 filter
Shadow Mask Molecular Beam Epitaxy for In-Plane Gradient Permittivity Materials
S. Mukherjee, S. R. Sitaram, X. Wang +1
Infrared spectroscopy currently requires the use of bulky, expensive, and/or fragile spectrometers. For gas sensing, environmental monitoring, or other applications in the field, a…
Growth Conditions and Interfacial Misfit Array in SnTe (111) films Grown on InP (111)A Substrates by Molecular Beam Epitaxy
Qihua Zhang, Maria Hilse, Wesley Auker +2
Tin telluride (SnTe) is an IV-VI semiconductor with a topological crystalline insulator band structure, high thermoelectric performance, and in-plane ferroelectricity. Despite its…
Quasi-van der Waals Epitaxial Growth of γ'-GaSe Thin Films on GaAs(111)B Substrates
Mingyu Yu, Sahani Amaya Iddawela, Jiayang Wang +5
GaSe is an important member of the post-transition metal chalcogenide family and is an emerging two-dimensional (2D) semiconductor material. Because it is a van der Waals material,…
Hybridized magnonic materials for THz frequency applications
D. -Q. To, A. Rai, J. M. O. Zide +4
The capability of magnons to hybridize and strongly couple with diverse excitations offers a promising avenue for realizing and controlling emergent properties that hold significan…
Treatment and Aging Studies of GaAs(111)B Substrates for van der Waals Chalcogenide Film Growth
Mingyu Yu, Jiayang Wang, Sahani A. Iddawela +5
GaAs(111)B is a semiconductor substrate widely used in research and commercial fields due to its low cost, mature synthesis technology, and excellent properties for manufacturing e…