26 citations · 57 across the 11 of their papers we have counts for
11 papers
Transport Evidence of Magnetic Polarization in the Altermagnetic Candidate MnTe
Younes Ghorbani, Nayana Devaraj, Joshua Maile +7
The ability to precisely control magnetic properties is central to the development of future spin-based electronics. In this work, we report the successful growth of epitaxial α-Mn…
Molecular Beam Epitaxy of Mn2In2Se5 van der Waals Layers Using Mn Intercalation
Qihua Zhang, Ke Wang, Wesley Auker +2
The weak van der Waals (vdW) force in layered chalcogenide materials has enabled the growth of ternary chalcogenide layers using unconventional approaches. Here, we report the mole…
Multi-modal machine learning analysis of GaSe molecular beam epitaxy growth conditions
Mingyu Yu, Isaiah A. Moses, Wesley F. Reinhart +1
Autonomous synthesis platforms integrating machine learning with in situ diagnostics have the potential to revolutionize thin-film growth by enabling real-time process optimization…
Molecular Beam Epitaxy Growth of Wafer-scale SnSe van der Waals Ultrathin Layers
Qihua Zhang, Maria Hilse, Joshua Bardsley +2
Tin selenide (SnSe) is a van der Waals (vdW) layered post-transition metal monochalcogenide compound which is promising for a wide range of device applications when its thickness i…
Examining the Spin Structure of Altermagnetic Candidate MnTe Grown with Near Ideal Stoichiometry
Qihua Zhang, Christopher J. Jensen, Alexander J. Grutter +11
Altermagnets are a recently-discovered class of materials with magnetic ordering that have a zero net magnetization and a momentum-dependent spin splitting in their band structure,…
Shadow Mask Molecular Beam Epitaxy for In-Plane Gradient Permittivity Materials
S. Mukherjee, S. R. Sitaram, X. Wang +1
Infrared spectroscopy currently requires the use of bulky, expensive, and/or fragile spectrometers. For gas sensing, environmental monitoring, or other applications in the field, a…
Growth Conditions and Interfacial Misfit Array in SnTe (111) films Grown on InP (111)A Substrates by Molecular Beam Epitaxy
Qihua Zhang, Maria Hilse, Wesley Auker +2
Tin telluride (SnTe) is an IV-VI semiconductor with a topological crystalline insulator band structure, high thermoelectric performance, and in-plane ferroelectricity. Despite its…
Quasi-van der Waals Epitaxial Growth of γ'-GaSe Thin Films on GaAs(111)B Substrates
Mingyu Yu, Sahani Amaya Iddawela, Jiayang Wang +5
GaSe is an important member of the post-transition metal chalcogenide family and is an emerging two-dimensional (2D) semiconductor material. Because it is a van der Waals material,…
Hybridized magnonic materials for THz frequency applications
D. -Q. To, A. Rai, J. M. O. Zide +4
The capability of magnons to hybridize and strongly couple with diverse excitations offers a promising avenue for realizing and controlling emergent properties that hold significan…
Treatment and Aging Studies of GaAs(111)B Substrates for van der Waals Chalcogenide Film Growth
Mingyu Yu, Jiayang Wang, Sahani A. Iddawela +5
GaAs(111)B is a semiconductor substrate widely used in research and commercial fields due to its low cost, mature synthesis technology, and excellent properties for manufacturing e…
Spectroscopy of van der Waals nanomaterials: Opportunities and Challenges
Sivakumar Vishnuvardhan Mambakkam, Stephanie Law
The study of van der Waals (vdW) materials has seen increased interest in recent years, due to the wide range of uses for these materials because of their unique mechanical, electr…