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20242026
most citedMolecular Beam Epitaxy of Mn2In2Se5 van der Waals Layers Using Mn Intercalation

4 citations · 4 across the 2 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci20264 cited

Molecular Beam Epitaxy of Mn2In2Se5 van der Waals Layers Using Mn Intercalation

Qihua Zhang, Ke Wang, Wesley Auker +2

The weak van der Waals (vdW) force in layered chalcogenide materials has enabled the growth of ternary chalcogenide layers using unconventional approaches. Here, we report the mole…

cond-mat.mtrl-sci2025

Defect-Mediated Phase Engineering of 2D Ag at the Graphene/SiC Interface

Arpit Jain, Boyang Zheng, Sawani Datta +23

Atomically thin silver (Ag) films offer unique opportunities in plasmonic, quantum optics, and energy harvesting, yet conventional growth methods struggle to achieve structural con…

cond-mat.mtrl-sci2025

Examining the Spin Structure of Altermagnetic Candidate MnTe Grown with Near Ideal Stoichiometry

Qihua Zhang, Christopher J. Jensen, Alexander J. Grutter +11

Altermagnets are a recently-discovered class of materials with magnetic ordering that have a zero net magnetization and a momentum-dependent spin splitting in their band structure,…

cond-mat.mtrl-sci2025

Two-dimensional Indium Oxide at the Epitaxial Graphene/SiC Interface: Synthesis, Structure, Properties, and Devices

Furkan Turker, Bohan Xu, Chengye Dong +15

High-quality two-dimensional (2D) dielectrics are crucial for fabricating 2D/3D hybrid vertical electronic devices such as metal-oxide-semiconductor (MOS) based Schottky diodes and…

cond-mat.mtrl-sci2024

Growth Conditions and Interfacial Misfit Array in SnTe (111) films Grown on InP (111)A Substrates by Molecular Beam Epitaxy

Qihua Zhang, Maria Hilse, Wesley Auker +2

Tin telluride (SnTe) is an IV-VI semiconductor with a topological crystalline insulator band structure, high thermoelectric performance, and in-plane ferroelectricity. Despite its…