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cond-mat.mtrl-sci2025
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations
Simanta Lahkar, Valeria Bragaglia, Behnaz Bagheri +4
Resistive random access memories (ReRAMs) with a bilayer TaOx/HfO2 stack structure have shown unique multi-level resistive switching capabilities. However, the physical processes g…
cond-mat.mtrl-sci2025
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering
Manasa Kaniselvan, Kevin Portner, Donato Francesco Falcone +6
A critical issue affecting filamentary resistive random access memory (RRAM) cells is the requirement of high voltages during electroforming. Reducing the magnitude of these voltag…