14 citations · 40 across the 11 of their papers we have counts for
11 papers
Update Disturbance-Resilient Analog ReRAM Crossbar Arrays for In-Memory Deep Learning Accelerators
Wooseok Choi, Tommaso Stecconi, Donato Francesco Falcone +14
Resistive memory (ReRAM) technologies with crossbar array architectures hold significant potential for analog AI accelerator hardware, enabling both in-memory inference and trainin…
Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive-Metal-Oxide/HfOx ReRAM via Compact Modeling
Matteo Galetta, Donato Francesco Falcone, Victoria Clerico +7
Resistive Random Access Memory (ReRAM) devices offer a promising solution for next-generation non-volatile memory and neuromorphic computing systems. Yet, existing compact models f…
Unsupervised local learning based on voltage-dependent synaptic plasticity for resistive and ferroelectric synapses
Nikhil Garg, Ismael Balafrej, Joao Henrique Quintino Palhares +11
The deployment of AI on edge computing devices faces significant challenges related to energy consumption and functionality. These devices could greatly benefit from brain-inspired…
Analytical Modelling of the Transport in Analog Filamentary Conductive-Metal-Oxide/HfOx ReRAM Devices
Donato Francesco Falcone, Stephan Menzel, Tommaso Stecconi +4
The recent co-optimization of memristive technologies and programming algorithms enabled neural networks training with in-memory computing systems. In this context, novel analog fi…
Energy-convergence trade off for the training of neural networks on bio-inspired hardware
Nikhil Garg, Paul Uriarte Vicandi, Yanming Zhang +5
The increasing deployment of wearable sensors and implantable devices is shifting AI processing demands to the extreme edge, necessitating ultra-low power for continuous operation.…
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations
Simanta Lahkar, Valeria Bragaglia, Behnaz Bagheri +4
Resistive random access memories (ReRAMs) with a bilayer TaOx/HfO2 stack structure have shown unique multi-level resistive switching capabilities. However, the physical processes g…
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering
Manasa Kaniselvan, Kevin Portner, Donato Francesco Falcone +6
A critical issue affecting filamentary resistive random access memory (RRAM) cells is the requirement of high voltages during electroforming. Reducing the magnitude of these voltag…
Hardware Implementation of Ring Oscillator Networks Coupled by BEOL Integrated ReRAM for Associative Memory Tasks
Wooseok Choi, Thomas van Bodegraven, Jelle Verest +8
We demonstrate the first hardware implementation of an oscillatory neural network (ONN) utilizing resistive memory (ReRAM) for coupling elements. A ReRAM crossbar array chip, integ…
Edge Training and Inference with Analog ReRAM Technology for Hand Gesture Recognition
Victoria Clerico, Anirvan Dutta, Donato Francesco Falcone +8
Tactile hand gesture recognition is a crucial task for user control in the automotive sector, where Human-Machine Interactions (HMI) demand low latency and high energy efficiency.…
All-in-One Analog AI Hardware: On-Chip Training and Inference with Conductive-Metal-Oxide/HfOx ReRAM Devices
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi +9
Analog in-memory computing is an emerging paradigm designed to efficiently accelerate deep neural network workloads. Recent advancements have focused on either inference or trainin…
High-Conductance, Ohmic-like HfZrO Ferroelectric Memristor
Laura Bégon-Lours, Mattia Halter, Youri Popoff +3
The persistent and switchable polarization of ferroelectric materials based on HfO-based ferroelectric compounds, compatible with large-scale integration, are attractive synapt…