most citedPoint defects and their dynamic behaviors in silver monolayer intercalated between graphene and SiC

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cond-mat.mtrl-sci2025

Two-dimensional Indium Oxide at the Epitaxial Graphene/SiC Interface: Synthesis, Structure, Properties, and Devices

Furkan Turker, Bohan Xu, Chengye Dong +15

High-quality two-dimensional (2D) dielectrics are crucial for fabricating 2D/3D hybrid vertical electronic devices such as metal-oxide-semiconductor (MOS) based Schottky diodes and…