activity
20242026
most citedEven-Odd Layer-Dependent Exchange Bias Effect in MnBi2Te4 Chern Insulator Devices

19 citations · 31 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2026★ 2 cited

Emergent giant topological Hall effect in twisted Fe3GeTe2 metallic system

Hyuncheol Kim, Kai-Xuan Zhang, Yu-Hang Li +3

The topological Hall effect, driven by the exchange interaction between conduction electrons and topological magnetic textures such as skyrmions, is a powerful probe for investigat…

cond-mat.mes-hall2025★ 5 cited

High-speed antiferromagnetic domain walls driven by coherent spin waves

Kyle L. Seyler, Hantao Zhang, Daniel Van Beveren +4

The ability to rapidly manipulate domain walls (DWs) in magnetic materials is key to developing novel high-speed spintronic memory and computing devices. Antiferromagnetic (AFM) ma…

cond-mat.mtrl-sci2025★ 3 cited

Anisotropic Field Suppression of Morin Transition Temperature in Epitaxially Grown Hematite Thin Films

Haoyu Liu, Hantao Zhang, Josiah Keagy +5

We have demonstrated the existence of the Morin transition in epitaxially grown hematite thin films exceeding a critical thickness. The Morin transition temperature can be suppress…

cond-mat.mes-hall2025★ 2 cited

Coherent Spin Pumping Originated from Sub-Terahertz Néel Vector Dynamics in Easy Plane α-Fe2O3/Pt

Gregory Fritjofson, Atul Regmi, Jacob Hanson-Flores +5

We present a thorough study of spin-to-charge current interconversion in bulk and thin films of (0001) α-Fe2O3 /Pt heterostructures by means of all-optical polarization-controlled…

cond-mat.mes-hall2024

Doubled Shapiro steps in a dynamic axion insulator Josephson junction

Yu-Hang Li, Ziqian Zhou, Ran Cheng +2

Dynamic axion insulators feature a time-dependent axion field that can be induced by antiferromagnetic resonance. Here, we show that a Josephson junction incorporating this dynamic…

cond-mat.mes-hall2024

Unconventional Unidirectional Magnetoresistance in vdW Heterostructures

I-Hsuan Kao, Junyu Tang, Gabriel Calderon Ortiz +13

Electrical readout of magnetic states is a key to realize novel spintronics devices for efficient computing and data storage. Unidirectional magnetoresistance (UMR) in bilayer syst…

cond-mat.mtrl-sci2024★ 19 cited

Even-Odd Layer-Dependent Exchange Bias Effect in MnBi2Te4 Chern Insulator Devices

Bo Chen, Xiaoda Liu, Yu-Hang Li +8

Magnetic topological materials with coexisting magnetism and non-trivial band structures exhibit many novel quantum phenomena, including the quantum anomalous Hall effect, the axio…