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Nonlocal Transport in Cr-doped (Bi,Sb)2Te3: Absence of Nonchiral Edge States
Valery Ortiz Jimenez, Paul M. Haney, Farzad Mahfouzi +3
The quantum anomalous Hall effect shows great promise for realization of the ohm without the need for an external magnetic field. The most mature material platform is magnetically…
From Wye-Delta to Cross-Square Recursion Configurations in Graphene-Based Quantum Hall Arrays
Ngoc Thanh Mai Tran, Marta Musso, Dominick S. Scaletta +8
In electrical metrology, the quantum Hall effect is accessed at the Landau level filling factor ν = 2 plateau to define and disseminate the unit of electrical resistance (ohm). The…
Influences of the Minkowski-Bouligand Dimension on Graphene-Based Quantum Hall Array Designs
Dominick S. Scaletta, Ngoc Thanh Mai Tran, Marta Musso +7
This work elaborates on how one may develop high-resistance quantized Hall array resistance standards (QHARS) by using star-mesh transformations for element count minimization. Ref…
Quantum Hall Transport Measurements of Lateral p-n Junctions Formed via Precise Spatial Photodoping of Graphene/hBN Heterostructures
Son T. Le, Thuc T. Mai, Maria F. Munoz +4
Doped semiconductors are a central and crucial component of all integrated circuits. By using a combination of white light and a focused laser beam, and exploiting hBN defect state…