activity
20212025
most citedElectrochemical control of ferroelectricity in hafnia-based ferroelectric devices using reversible oxygen migration

17 citations · 28 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2025

Electrical Modulation and Probing of Antiferromagnetism in Hybrid Multiferroic Heterostructures

Yuhan Liang, Huiping Han, Hetian Chen +11

The unique features of ultrafast spin dynamics and the absence of macroscopic magnetization in antiferromagnetic (AFM) materials provide a distinct route towards high-speed magneti…

cond-mat.mtrl-sci2025★ 3 cited

Artificial ferroelectric-like hysteresis in antiferroelectrics with non-uniform disorder

Yi Zhang, Xinyu Zhang, Zihao Zheng +27

Antiferroelectrics exhibit unique double-hysteresis polarization loops, which have garnered significant attention due to their potential applications such as energy storage, electr…

cond-mat.mtrl-sci2025

Etching-free dual-lift-off for direct patterning of epitaxial oxide thin films

Jiayi Qin, Josephine Si Yu See, Yanran Liu +19

Although monocrystalline oxide films offer broad functional capabilities, their practical use is hampered by challenges in patterning. Traditional patterning relies on etching, whi…

cond-mat.mes-hall2023★ 8 cited

Significant Unconventional Anomalous Hall Effect in Heavy Metal/Antiferromagnetic Insulator Heterostructures

Yuhan Liang, Liang Wu, Minyi Dai +16

The anomalous Hall effect (AHE) is a quantum coherent transport phenomenon that conventionally vanishes at elevated temperatures because of thermal dephasing. Therefore, it is puzz…

physics.app-ph2021★ 17 cited

Electrochemical control of ferroelectricity in hafnia-based ferroelectric devices using reversible oxygen migration

M. H. Shao, H. F. Liu, R. He +13

Ferroelectricity, especially in hafnia-based thin films at nanosizes, has been rejuvenated in the fields of low-power, nonvolatile and Si-compatible modern memory and logic applica…